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1.2V Drive Nch+Pch MOSFET
EM6M2
Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm)
EMT6
Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
Each lead has same dimensions
Abbreviated symbol : M02
Applications Switching
Inner circuit
(6) (5) 1 (4)
Packaging specifications
Package Type EM6M2
(1)
Taping T2R 8000
1 (2) (3) 2
2
Code Basic ordering unit (pieces)
1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain
Absolute maximum ratings (Ta=25C)
Parameter Symbol VDSS VGSS ID IDP1 PD 2 Tch Tstg Limits Tr1 : N-ch Tr2 : P-ch -20 20 10 8 200 200 400 400 150 120 150 -55 to +150 Unit V V mA mA mW / TOTAL mW / ELEMENT C C
Drain-source voltage Gate-source voltage Drain current Continuous Pulsed
Total power dissipation Channel temperature Range of storage temperature
1 Pw 10s, Duty cycle 1% 2 Each terminal mounted on a recommended land
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c 2009 ROHM Co., Ltd. All rights reserved.
1/7
2009.07 - Rev.A
EM6M2
N-ch Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 20 - 0.3 - - - - - 0.2 - - - - - - - Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Typ. - - - - 0.7 0.8 1.0 1.2 1.6 - 25 10 10 5 10 15 10 Max. 10 - 1 1.0 1.0 1.2 1.4 2.4 4.8 - - - - - - - - Unit A V A V S pF pF pF ns ns ns ns Conditions VGS= 8V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 200mA, VGS= 4.0V ID= 200mA, VGS= 2.5V ID= 200mA, VGS= 1.8V ID= 40mA, VGS= 1.5V ID= 20mA, VGS= 1.2V VDS= 10V, ID= 200mA VDS= 10V VGS= 0V f=1MHz VDD 10V ID= 150mA VGS= 4.0V RL 67 RG= 10
Data Sheet
Static drain-source on-state resistance
RDS (on)
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Pulsed
Yfs Ciss Coss Crss td (on) tr td (off) tf
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS= 100mA, VGS=0V
P-ch Electrical characteristics (Ta=25C)
Parameter Symbol Min. - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 - IDSS Zero gate voltage drain current VGS (th) -0.3 Gate threshold voltage - - Static drain-source on-state RDS (on) - resistance - - Forward transfer admittance Yfs 0.2 Input capacitance Ciss - Output capacitance Coss - Reverse transfer capacitance Crss - Turn-on delay time - td (on) Rise time tr - Turn-off delay time td (off) - Fall time - tf
Pulsed
Typ. - - - - 0.8 1.0 1.3 1.6 2.4 - 115 10 6 6 4 17 17
Max. 10 - -1 -1.0 1.2 1.5 2.2 3.5 9.6 - - - - - - - -
Unit A V A V S pF pF pF ns ns ns ns
Conditions VGS= 10V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -100A ID= -200mA, VGS= -4.5V ID= -100mA, VGS= -2.5V ID= -100mA, VGS= -1.8V ID= -40mA, VGS= -1.5V ID= -10mA, VGS= -1.2V VDS= -10V, ID= -200mA VDS= -10V VGS= 0V f=1MHz VDD -10V ID= -100mA VGS= -4.5V RL 100 RG= 10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -200mA, VGS=0V
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2/7
2009.07 - Rev.A
EM6M2
N-ch Electrical characteristic curve
0.5 Ta=25C Pulsed VGS= 1.5V 0.3 VGS= 1.3V 0.2 VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.2V DRAIN CURRENT : ID [A] 0.5
DRAIN CURRENT : ID (A)
Data Sheet
1 VDS=10V Pulsed
DRAIN CURRENT : ID [A]
0.4
0.4
VGS= 2.5V VGS= 1.8V VGS= 1.3V
0.1
0.3 VGS= 1.2V VGS= 1.5V 0.1 Ta=25C Pulsed 0 2 4 6 8 10
0.01 Ta=125C 75C 25C -25C
0.2
0.001
0.1
0.0001
0 0 0.2 0.4 0.6 0.8 1
0
0.00001 0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics()
Fig.3 Typical transfer characteristics
10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
1000
1000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
Ta= 25C Pulsed
10000 VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V
VGS= 4.0V Pulsed
10000 Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= 2.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
100 0.001
0.01
0.1
1
100 0.001
0.01
0.1
1
100 0.001
0.01
0.1
1
DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
VGS= 1.8V Pulsed
10000
VGS= 1.5V Pulsed
10000
VGS= 1.2V Pulsed
1000 Ta=125C Ta=75C Ta=25C Ta= -25C 100 0.001
1000 Ta=125C Ta=75C Ta=25C Ta= -25C 100 0.001
1000 Ta=125C Ta=75C Ta=25C Ta= -25C
0.01
0.1
1
0.01
0.1
1
100 0.001
0.01
0.1
1
DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current()
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3/7
2009.07 - Rev.A
EM6M2
1 FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1
Data Sheet
2.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[] ID = 0.2A 2
VDS= 10V Pulsed
SOURCE CURRENT : IS (A)
VGS=0V Pulsed
Ta=25C Pulsed
Ta= -25C Ta=25C Ta=75C Ta=125C
0.1
Ta=125C 75C 25C -25C
1.5
1
0.5
ID = 0.02A
0.1 0.01
0.1 DRAIN-CURRENT : ID [A] Fig.10 Forward Transfer Admittance vs. Drain Current
1
0.01 0.0
0.5
1
1.5
0 0 2 4 6 8 10
SOURCE-DRAIN VOLTAGE : VSD (V)
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Source current vs. source-drain voltage
Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000
SWITHING TIME : t (ns)
100
CAPACITANCE : C [pF]
Ta=25C VDD=10V VGS=4V RG=10 Pulsed
100 Ciss
10
10
td(off) tf td(on) tr
Crss Coss Ta=25C f=1MHz VGS=0V 0.01 0.1 1 10 100
1 0.01
0.1 DRAIN CURRENT : ID (A)
1
1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Switching characteristics
Fig.14 Typical Capacitance vs. Drain-Source Voltage
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4/7
2009.07 - Rev.A
EM6M2
P-ch Electrical characteristic curve
0.2 VGS= -10.0V VGS= -4.5V VGS= -3.2V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 0.2 VGS= -4.5V 0.15 VGS= -2.5V VGS= -1.8V VGS= -1.5V VGS= -1.2V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 1 VDS= -10V Pulsed
Data Sheet
DRAIN CURRENT : -ID [A]
0.15
0.1 Ta= 125C 0.01 Ta= 75C Ta= 25C Ta= - 25C
0.1 VGS= -1.5V 0.05 VGS= -1.2V 0 0 0.2 0.4 0.6
VGS= -2.5V VGS= -2.0V VGS= -1.8V
0.1
0.05 VGS= -1.0V 0
0.001
VGS= -1.0V
0.0001 0 2 4 6 8 10 0 0.5 1 1.5
0.8
1
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics()
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics()
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
10000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
Ta=25C Pulsed
10000
VGS= -4.5V Pulsed
10000 Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= -2.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 0.001 0.01 0.1 1
1000
1000
100 0.001
0.01
0.1
1
100 0.001
0.01
0.1
1
DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( )
DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( )
DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
10000
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
VGS= -1.8V Pulsed
10000
VGS= -1.5V Pulsed
10000
VGS= -1.2V Pulsed
1000
1000 Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100 0.001
0.01
0.1
1
100 0.001
0.01 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
0.1
100 0.001
0.01 DRAIN-CURRENT : -ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current()
0.1
DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
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5/7
2009.07 - Rev.A
EM6M2
FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1.0 1 REVERSE DRAIN CURRENT : -Is [A] 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[]
Data Sheet
VDS= -10V Pulsed
VGS=0V Pulsed
Ta=25C Pulsed
4 ID = -0.2A 3 ID = -0.01A 2
Ta=-25C Ta=25C Ta=75C Ta=125C
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
1
0.1 0.01
0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0 0.5 1 1.5
0 0 2 4 6 8 10
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000 td(off) SWITCHING TIME : t [ns] 100 tf
GATE-SOURCE VOLTAGE : -VGS [V]
4
CAPACITANCE : C [pF]
Ta=25C VDD = -10V VGS=-4.5V R G=10 Pulsed
5
1000
Ta=25C f=1MHz VGS=0V
Ciss
100
3
2 Ta=25C VDD = -10V ID = -0.2A R G=10 Pulsed 0 0.5 1 1.5
10
10 Coss Crss 1 0.01 0.1 1 10 100
1
tr 1 0.01
td(on) 0.1 DRAIN-CURRENT : -ID [A] 1
0
TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage
Fig.13 Switching Characteristics
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c 2009 ROHM Co., Ltd. All rights reserved.
6/7
2009.07 - Rev.A
EM6M2
N-ch Measurement circuit
Pulse Width 50% 10% 10% 90% 50%
Data Sheet
VGS
VGS ID VDS D.U.T. RG VDD
td
VDS
10% 90% 90%
td tf
off
RL
on
tr ton
toff
Fig.1-1 Switching Time Measurement circuit
Fig.1-2 Switching Waveforms
P-ch Measurement circuit
VGS Pulse Width 10% 50% 50%
VGS
ID RL
VDS
10% VDS
td
on
90%
10% 90%
td
off
RG VDD
90%
tr ton tf toff
Fig.2-1 Switching Time Measurement circuit
Fig.2-2 Switching Waveforms
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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c 2009 ROHM Co., Ltd. All rights reserved.
7/7
2009.07 - Rev.A
Notice
Notes
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